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SiA533EDJ
Vishay Siliconix
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ.
Max.
Typ.
Max.
Unit
Maximum Junction-to-Ambient
b, f
Maximum Junction-to-Case (Drain)
t ≤ 5s
Steady State
R thJA
R thJC
52
12.5
65
16
52
12.5
65
16
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile ( www.vishay.com/ppg?73257 ). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = 250 μA
V GS = 0 V, I D = - 250 μA
I D = 250 μA
I D = - 250 μA
I D = 250 μA
I D = - 250 μA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
12
- 12
19
- 5.7
- 2.7
1.7
V
mV/°C
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 250 μA
V DS = V GS , I D = - 250 μA
V DS = 0 V, V GS = ± 4.5 V
V DS = 0 V, V GS = ± 8 V
V DS = 12 V, V GS = 0 V
V DS = - 12 V, V GS = 0 V
V DS = 12 V, V GS = 0 V, T J = 55 °C
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
0.4
- 0.4
1.0
- 1.0
± 0.5
± 0.5
±5
±5
1
-1
10
V
μA
V DS = - 12 V, V GS = 0 V, T J = 55 °C
P-Ch
- 10
On-State Drain Current b
I D(on)
V DS ≥ 5 V, V GS = 4.5 V
V DS ≤ - 5 V, V GS = - 4.5 V
V GS = 4.5 V, I D = 4.6 A
V GS = - 4.5 V, I D = - 3.6 A
V GS = 2.5 V, I D = 4.2 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
10
- 10
0.028
0.048
0.032
0.034
0.059
0.040
A
Drain-Source On-State Resistance b
R DS(on)
V GS = - 2.5 V, I D = - 3.1 A
V GS = 1.8 V, I D = 3.8 A
P-Ch
N-Ch
0.066
0.038
0.081
0.050
Ω
V GS = - 1.8 V, I D = - 2.6 A
V GS = 1.5 V, I D = 1.5 A
V GS = - 1.5 V, I D = - 0.5 A
P-Ch
N-Ch
P-Ch
0.093
0.045
0.120
0.115
0.070
0.215
Forward Transconductance b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
g fs
C iss
C oss
C rss
V DS = 6 V, I D = 4.6 A
V DS = - 6 V, I D = - 3.6 A
N-Channel
V DS = 6 V, V GS = 0 V, f = 1 MHz
P-Channel
V DS = - 6 V, V GS = 0 V, f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
21
11
420
545
100
192
62
175
S
pF
www.vishay.com
2
Document Number: 65706
S10-0214-Rev. A, 25-Jan-10
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